Sengupta, A. , Ghosh, R. K. and Mahapatra, S. (2013) Performance analysis of strained monolayer MoS2 MOSFET. IEEE Transactions on Electron Devices, 60(9), pp. 2782-2787. (doi: 10.1109/TED.2013.2273456)
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Abstract
We present a computational study on the impact of tensile/compressive uniaxial (ε xx ) and biaxial (ε xx =ε yy ) strain on monolayer MoS 2 , n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrödinger solution under the nonequilibrium Green's function formalism is carried out to simulate the MOS device characteristics. 1.75% uniaxial tensile strain is found to provide a minor (6%) ON current improvement for the n-MOSFET, whereas same amount of biaxial tensile strain is found to considerably improve the p-MOSFET ON currents by 2-3 times. Compressive strain, however, degrades both n-MOS and p-MOS devices performance. It is also observed that the improvement in p-MOSFET can be attained only when the channel material becomes indirect gap in nature. We further study the performance degradation in the quasi-ballistic long-channel regime using a projected current method.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sengupta, Dr Amretashis |
| Authors: | Sengupta, A., Ghosh, R. K., and Mahapatra, S. |
| College/School: | College of Science and Engineering > School of Engineering > Systems Power and Energy |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | IEEE |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Published Online: | 26 July 2013 |
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