Mukhopadhyay, A., Banerjee, L., Sengupta, A. and Rahaman, H. (2015) Strain Modulated Variations in Monolayer Phosphorene n-MOSFET. In: 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, 01-04 Jun 2015, pp. 261-264. ISBN 9781479983643 (doi: 10.1109/EDSSC.2015.7285100)
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Abstract
We investigate the effect of tensile and compressive strain in Phosphorene FET. Different percentage of tensile and compressive strain are applied on monolayer Phosphorene along the zigzag edge and the corresponding effects on bandgap, electron effective mass and ON current are analyzed. The optimum strain region is observed at 4% tensile strain for Phosphorene for the application in FET device. About 8.5 times improvement in ON current was observed for this strain percentage.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Sengupta, Dr Amretashis |
| Authors: | Mukhopadhyay, A., Banerjee, L., Sengupta, A., and Rahaman, H. |
| College/School: | College of Science and Engineering > School of Engineering > Systems Power and Energy |
| ISBN: | 9781479983643 |
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