Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

Mukhopadhyay, A., Banerjee, L., Sengupta, A. and Rahaman, H. (2015) Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor. Journal of Applied Physics, 118(22), 224501. (doi: 10.1063/1.4937148)

Abstract

We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Sengupta, Dr Amretashis
• Authors: Mukhopadhyay, A., Banerjee, L., Sengupta, A., and Rahaman, H.
• College/School: College of Science and Engineering > School of Engineering > Systems Power and Energy
• Journal Name: Journal of Applied Physics
• Publisher: AIP Publishing
• ISSN: 0021-8979
• ISSN (Online): 1089-7550
• Published Online: 08 December 2015