Optimization of Epilayer and Grating Geometries for Narrow Linewidth DFB Lasers (Conference Presentation)

Di Gaetano, E. and Sorel, M. (2018) Optimization of Epilayer and Grating Geometries for Narrow Linewidth DFB Lasers (Conference Presentation). SPIE Nanoscience + Engineering 2018, San Diego, CA, USA, 19-23 Aug 2018. (doi: 10.1117/12.2320760)

197484.pdf - Presentation



Due to the demand on accurate metrology applications, the request for stable and powerful semiconductor laser is strongly increasing. An accurate analysis and optimization of the epilayer active material and of complex Bragg grating geometries allows to design and fabricate narrow linewidth DFB lasers without limiting the power output range. This general approach is suitable for laser devices emitting in a wide wavelength range within visible and infrared and based on different material platforms, such as InP, GaAs or GaN. The fabricated devices exhibit linewidth as narrow as few hundreds kHz and power output in the range of few tens mW.

Item Type:Conference or Workshop Item
Glasgow Author(s) Enlighten ID:Di Gaetano, Mr Eugenio and Sorel, Professor Marc
Authors: Di Gaetano, E., and Sorel, M.
Subjects:Q Science > Q Science (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
First Published:First published in Proceedings of SPIE 10730: 107300N
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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