Fast etching of microscale structures by bombardment with electrosprayed nanodroplets

Grustan Gutierrez, E. , Borrajo-Pelaez, R. and Gamero-Castaño, M. (2014) Fast etching of microscale structures by bombardment with electrosprayed nanodroplets. International Symposium on Microelectronics, 2014(1), pp. 466-470. (doi:10.4071/isom-wa36)

Full text not currently available from Enlighten.


In this article Si substrates protected by Shipley 1827 and Au masks are sputtered with electrosprayed nanodroplets to produce microscale structures. Silicon is used as a benchmark to assess the effect of the physical sputtering of nanodroplets on more interesting chemically inert materials such as SiC and GaN. The use of Shipley 1827 as a patterning mask provides a virtually infinite etching selectivity between substrate and photoresist at the cost of non-perpendicular wall profiles and debris redeposition. After 60 minutes of processing the target at a sputtering rate of 244 nm/min, a fraction of the sputtered material deposits back on the substrate forming a protective layer that stops any further sputtering. In a second set of experiments the selectivity between Si and Au to be used as a potential mask is studied. The maximum selectivity is 64.17, and is obtained at an etching rate of 385 nm/min. An increase of the etching rate produces a sharp drop on the selectivity between Au and Si.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Grustan Gutierrez, Dr Enric
Authors: Grustan Gutierrez, E., Borrajo-Pelaez, R., and Gamero-Castaño, M.
College/School:College of Science and Engineering > School of Engineering > Aerospace Sciences
Journal Name:International Symposium on Microelectronics
Publisher:International Microelectronics Assembly and Packaging Society
ISSN (Online):2380-4505

University Staff: Request a correction | Enlighten Editors: Update this record