Probing local coordination environments in high-k materials for gate stack applications

McComb, D.W., Craven, A.J., Hamilton, D.A. and MacKenzie, M. (2004) Probing local coordination environments in high-k materials for gate stack applications. Applied Physics Letters, 84(22), pp. 4523-4525. (doi: 10.1063/1.1758303)

Abstract

Using electron energy-loss spectroscopy, the oxygen K-edge excitation in a range of crystalline standards relevant to candidate high-k materials has been examined. The spectra have been modeled using electronic structure calculations in order to understand the influence of the local coordination environment on the data. The knowledge obtained is used to probe the local atomic structure in thin amorphous films of "HfSiO."

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Craven, Professor Alan
• Authors: McComb, D.W., Craven, A.J., Hamilton, D.A., and MacKenzie, M.
• Subjects: Q Science > QD Chemistry; T Technology > TP Chemical technology
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Applied Physics Letters
• ISSN: 0003-6951

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
35067	1	Chemistry, structure and bonding in high-k gate oxide stacks	Alan Craven	Engineering & Physical Sciences Research Council (EPSRC)	GR/S44280/01	Physics and Astronomy