TuA4.1 - Mid-infrared Sensing with Ge on Si Waveguides (Invited)

Gallacher, K. , Millar, R. W. , Griskevivuite, U., Baldassarre, L., Sorel, M. , Ortolani, M. and Paul, D. J. (2019) TuA4.1 - Mid-infrared Sensing with Ge on Si Waveguides (Invited). In: 2019 IEEE Photonics Society Summer Topical Meeting Series (SUM), Ft. Lauderdale, FL, USA, 08-10 Jul 2019, ISBN 9781728105970 (doi: 10.1109/PHOSST.2019.8795039)

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Abstract

Ge-on-Si waveguides with losses below 5 dB/cm across 7.5 to 11 µm wavelength are demonstrated. Sidewall etch roughness was measured using atomic force microscopy to investi- gate the waveguide loss mechanisms. Mid-infrared spectroscopy of poly(methyl methacrylate) was demonstrated using the Ge waveguides for mid-infrared sensing.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Dr Ross and Sorel, Professor Marc and Hawley, Mrs Ugne and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Gallacher, K., Millar, R. W., Griskevivuite, U., Baldassarre, L., Sorel, M., Ortolani, M., and Paul, D. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:2376-8614
ISBN:9781728105970
Published Online:15 August 2019
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in 2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
694301Engineering Quantum Technology Systems on a Silicon PlatformDouglas PaulEngineering and Physical Sciences Research Council (EPSRC)EP/N003225/1ENG - ENGINEERING ELECTRONICS & NANO ENG