Spin-Hall Nano-Oscillator Simulations

Bertram, J., Tanwear, A., Rodriguez, A., Paterson, G. , McVitie, S. and Heidari, H. (2019) Spin-Hall Nano-Oscillator Simulations. In: IEEE Sensors 2019, Montreal, QC, Canada, 27-30 Oct 2019, ISBN 9781728116341 (doi: 10.1109/SENSORS43011.2019.8956860)

192778.pdf - Accepted Version



A spin-Hall nano-oscillator (SHNO) is a type of spintronic oscillator that shows promising performance as a nanoscale microwave source and for neuromorphic computing applications. Within such nanodevices, a non-ferromagnetic layer in the presence of an external magnetic field and a DC bias current generates an oscillating microwave voltage. For developing optimal nano-oscillators, accurate simulations of the device’s complex behaviour are required before fabrication. This work simulates the key behaviour of a nanoconstriction SHNO as the applied DC bias current is varied. The current density and Oersted field of the device have been presented, the magnetisation oscillations have been clearly visualised in three dimensions and the spatial distribution of the active mode determined. These simulations allow designers a greater understanding and characterisation of the device’s behaviour while also providing a means of comparison when experimental results are generated.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:McVitie, Professor Stephen and Hierro Rodriguez, Dr Aurelio and Tanwear, Dr Asfand and Bertram, Mr Jon and Paterson, Dr Gary and Heidari, Professor Hadi
Authors: Bertram, J., Tanwear, A., Rodriguez, A., Paterson, G., McVitie, S., and Heidari, H.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Published Online:13 January 2020
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in IEEE Sensors 2019
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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