Post-Growth Bandgap Engineering in InP

Yanson, D.A., Kowalski, O.P., McDougall, S.D. and Marsh, J.H. (2005) Post-Growth Bandgap Engineering in InP. In: 2005 International Conference on Indium Phosphide and Related Materials, Glasgow, Scotland, 8-12 May 2005, pp. 504-507. ISBN 0780388917 (doi: 10.1109/ICIPRM.2005.1517543)

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We report novel quantum-well intermixing techniques that allow multiple bandgaps to be generated on a single InP substrate or device. The proposed processes are suitable for the manufacture of monolithically integrated optoelectronic devices and circuits.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Yanson, D.A., Kowalski, O.P., McDougall, S.D., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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