Novel High-Brightness Laser Dtodes at 830 nm

Yanson, D. A., Qiu, B., Kowalski, O. P., McDougall, S. D. and Marsh, J. H. (2006) Novel High-Brightness Laser Dtodes at 830 nm. In: LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Montreal, Que., Canada, 29 Oct - 2 Nov 2006, pp. 585-586. ISBN 0780395565 (doi: 10.1109/LEOS.2006.278794)

Abstract

We present novel high-power laser diodes at 830 nm with a device structure and epitaxy design optimized for high-brightness operation. A reduction in both horizontal and vertical far-field angles is demonstrated together with improvement in beam quality.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Yanson, D. A., Qiu, B., Kowalski, O. P., McDougall, S. D., and Marsh, J. H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1092-8081
• ISBN: 0780395565