Gupta, S., Yogeswaran, N., Giacomozzi, F., Lorenzelli, L. and Dahiya, R. (2018) Flexible AlN Coupled MOSFET Device for Touch Sensing. In: 2018 IEEE Sensors, New Delhi, India, 28-31 Oct 2018, ISBN 9781538647073 (doi: 10.1109/ICSENS.2018.8589628)
Full text not currently available from Enlighten.
Abstract
This work presents touch sensing device with flexible piezoelectric Aluminium Nitride (AIN) capacitor tightly coupled with a MOSFET device. Unlike conventional high-temperature deposition, the A1N in this work was sputtered on polyimide at room temperature to obtain a flexible piezoelectric touch sensing element. Further, the proposed device has reliable operation as unlike other similar touch sensing devices, where high voltage needed to polarize the piezoelectric layer poses a major risk for the MOSFET operation, the A1N does not require any poling. The touch sensor has been evaluated in a force range of 0.5-3.5N and normalised change in drain current per unit force or the sensitivity is found to be 2.64 N -1.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Yogeswaran, Mr Nivasan and Gupta, Mr Shoubhik and Dahiya, Professor Ravinder |
Authors: | Gupta, S., Yogeswaran, N., Giacomozzi, F., Lorenzelli, L., and Dahiya, R. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISSN: | 2168-9229 |
ISBN: | 9781538647073 |
University Staff: Request a correction | Enlighten Editors: Update this record