Low Voltage Graphene FET Based Pressure Sensor

Yogeswaran, N., Gupta, S. and Dahiya, R. (2018) Low Voltage Graphene FET Based Pressure Sensor. In: 2018 IEEE Sensors, New Delhi, India, 28-31 Oct 2018, ISBN 9781538647073 (doi: 10.1109/ICSENS.2018.8589569)

186086.pdf - Accepted Version



This paper presents a low voltage graphene field effect transistor (GFET) based pressure sensor. The sensor comprises of GFET connected with a piezoelectric Aluminium Nitride (AIN) capacitor in an extended gate configuration. In this configuration, the piezopotential generated across the AlN capacitor, as a result of applied pressure, appears at the gate terminal of GFET and modulates the channel current. The sensor operates at a remarkably low voltage (100 mV) and exhibits a sensitivity of about 7.18×10 -3 Pa -1 for a pressure range of 3.25-9.74 kPa. These values make the developed GFET sensor suitable for tactile skin in robotics and prosthetics and for wearable health monitoring devices.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Gupta, Mr Shoubhik and Yogeswaran, Mr Nivasan and Dahiya, Professor Ravinder
Authors: Yogeswaran, N., Gupta, S., and Dahiya, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2018 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
663861Engineering Fellowships for Growth: Printed Tactile SKINRavinder DahiyaEngineering and Physical Sciences Research Council (EPSRC)EP/M002527/1ENG - ENGINEERING ELECTRONICS & NANO ENG