Yogeswaran, N., Gupta, S. and Dahiya, R. (2018) Low Voltage Graphene FET Based Pressure Sensor. In: 2018 IEEE Sensors, New Delhi, India, 28-31 Oct 2018, ISBN 9781538647073 (doi: 10.1109/ICSENS.2018.8589569)
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186086.pdf - Accepted Version 809kB |
Abstract
This paper presents a low voltage graphene field effect transistor (GFET) based pressure sensor. The sensor comprises of GFET connected with a piezoelectric Aluminium Nitride (AIN) capacitor in an extended gate configuration. In this configuration, the piezopotential generated across the AlN capacitor, as a result of applied pressure, appears at the gate terminal of GFET and modulates the channel current. The sensor operates at a remarkably low voltage (100 mV) and exhibits a sensitivity of about 7.18×10 -3 Pa -1 for a pressure range of 3.25-9.74 kPa. These values make the developed GFET sensor suitable for tactile skin in robotics and prosthetics and for wearable health monitoring devices.
| Item Type: | Conference Proceedings |
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| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Gupta, Mr Shoubhik and Yogeswaran, Mr Nivasan and Dahiya, Professor Ravinder |
| Authors: | Yogeswaran, N., Gupta, S., and Dahiya, R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 2168-9229 |
| ISBN: | 9781538647073 |
| Copyright Holders: | Copyright © 2018 IEEE |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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