Ternent, G. and Paul, D. J. (2013) Si/SiGe tunneling static random access memories. ECS Transactions, 50(9), pp. 987-990. (doi: 10.1149/05009.0987ecst)
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Abstract
One of the limits to the low power operation of MOSFET devices is the minimum subthreshold slope defined by the p-n junctions in the devices. A tunneling static random access memory is demonstrated with a supply voltage of 0.42 V, well below the minimum supply voltage that MOSFET technology is capable of delivering. The memory is produced using two Si/SiGe resonant tunneling diodes with peak voltages of 0.175 V fabricated on top of a silicon substrate.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
| Authors: | Ternent, G., and Paul, D. J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Semiconductor Devices |
| Journal Name: | ECS Transactions |
| Publisher: | Electrochemical Society |
| ISSN: | 1938-5862 |
| ISSN (Online): | 1938-6737 |
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