See, P., Paul, D.J. , Hollander, B., Mantl, S., Zozoulenko, I.V. and Berggren, K.-F. (2001) High performance Si/Si/sub 1-x/Gex resonant tunneling diodes. IEEE Electron Device Letters, 22(4), pp. 182-184. (doi: 10.1109/55.915607)
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Abstract
Resonant tunneling diodes (RTDs) with strained i-Si/sub 0.4/Ge/sub 0.6/ potential barriers and a strained i-Si quantum well, all on a relaxed Si/sub 0.8/Ge/sub 0.2/ virtual substrate were successfully grown by ultra high vacuum compatible chemical vapor deposition and fabricated using standard Si processing methods. A large peak to valley current ratio of 2.9 and a peak current density of 4.3 kA/cm/sup 2/ at room temperature were recorded from pulsed and continuous dc current-voltage measurements, the highest reported values to date for Si/Si/sub 1-x/Ge/sub x/ RTDs. These dc figures of merit and material system render such structures suitable and highly compatible with present high speed and low power Si/Si/sub 1-x/Ge/sub x/ heterojunction field effect transistor based integrated circuits.
Item Type: | Articles |
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Keywords: | Ge-Si alloys, chemical vapour deposition, current density, field effect integrated circuits, internal stresses, quantum well devices, resonant tunnelling diodes, semiconductor device measurement, silicon, RTDs, Si processing, Si/Si/sub 1-x/Ge/sub x/ HFET based integrated circuits, Si/sub 0.4/Ge/sub 0.6/-Si, Si/sub 0.8/Ge/sub 0.2/, band gap engineered device, continuous dc current-voltage measurements, dc figures of merit, high performance Si/Si/sub 1-x/Ge/sub x/ resonant tunneling diodes, peak current density, peak to valley current ratio, pulsed dc current-voltage measurements, relaxed Si/sub 0.8/Ge/sub 0.2/ virtual substrate, strained i-Si quantum well, strained i-Si/sub 0.4/Ge/sub 0.6/ potential barriers, ultra high vacuum compatible chemical vapor deposition, chemical vapor deposition, current density, current measurement, density measurement, diodes, elementary particle vacuum, heterojunctions, pulse measurements, resonant tunneling devices, temperature |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
Authors: | See, P., Paul, D.J., Hollander, B., Mantl, S., Zozoulenko, I.V., and Berggren, K.-F. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
Journal Name: | IEEE Electron Device Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
ISSN (Online): | 0741-3106 |
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