Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

Shlimak, I., Ginodman, V., Levin, M., Potemski, M., Maude, D.K., Friedland, K.-J. and Paul, D.J. (2003) Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors. Physical Review B, 68, 075321. (doi: 10.1103/PhysRevB.68.075321)

Abstract

We have investigated temperature dependence of the longitudinal conductivity σ xx at integer filling factors ν=i for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd i, when the Fermi level EF is situated between the valley-split levels, Δσxx is determined by quantum corrections to conductivity caused by the electron-electron interaction: Δσxx(T)∼lnT. For even i, when EF is located between cyclotron-split levels or spin-split levels, σxx∼exp[−Δi/T] for i=6,10, 12 and ∼exp[−(T0i/T)]1/2 for i=4,8. For further decrease of T, all dependences σxx(T) tend to almost temperature-independent residual conductivity σi(0). A possible mechanism for σi(0) is discussed.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Shlimak, I., Ginodman, V., Levin, M., Potemski, M., Maude, D.K., Friedland, K.-J., and Paul, D.J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices
• Journal Name: Physical Review B
• Publisher: American Physical Society
• ISSN: 1098-0121
• ISSN (Online): 1550-235X