On the Existence of Terahertz Plasmons in Two-dimensional Semiconductor Heterostructures

Abbas, H.T., Aljihmani, L., Abbasi, Q. H. and Qaraqe, K.A. (2019) On the Existence of Terahertz Plasmons in Two-dimensional Semiconductor Heterostructures. In: 2019 International Conference on Electromagnetics in Advanced Applications (ICEAA-IEEE APWC), Granada, Spain, 9-13 Sept 2019, ISBN 9781728105635 (doi: 10.1109/ICEAA.2019.8879335)

Abstract

Plasmons existing along a semiconductor heterostructure found in a high electron mobility transistor are studied. With the help of the electronic properties of group III-V semiconductor materials, a multilayer structure is described using an equivalent transmission line network. The existence of surface waves is investigated using the transverse resonance method, and it is established that the complex conductivity of the two-dimensional electron gas with a negative imaginary part yields surface plasmons in the terahertz frequency domain.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Abbasi, Professor Qammer
• Authors: Abbas, H.T., Aljihmani, L., Abbasi, Q. H., and Qaraqe, K.A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9781728105635
• Copyright Holders: Copyright © 2019 IEEE
• First Published: First published in 2019 International Conference on Electromagnetics in Advanced Applications (ICEAA)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

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