Large modulation depth, single-moded quantum well waveguide modulator operating around 1.57 μm

Bryce, A.C., Marsh, J.H. , Taylor, L.L., Bass, S.J. and Guy, D.R.P. (1991) Large modulation depth, single-moded quantum well waveguide modulator operating around 1.57 μm. Electronics Letters, 27(4), pp. 304-306. (doi: 10.1049/el:19910192)

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Abstract

The performance of long wavelength single-mode waveguide modulators suitable for monolithic integration with a quantum well laser is reported. The device operated between 1.560 mu m and 1.570 mu m. The guiding layer was formed by a 0.27 mu m quaternary layer at the centre of which were four 50 AA In/sub 0.53/Ga/sub 0.47/As quantum wells separated by 100 AA InP barrier layers. Lateral confinement was obtained by etching ridges in the top InP contact layer. For devices of 500 mu m length, a modulation depth of 19 dB was obtained at a wavelength of 1.568 mu m with a reverse bias voltage of only 3 V and an internal loss of 2.5 dB.

Item Type:Articles
Additional Information:This work was supported by the SERC under grant GR/D99607.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Bryce, A.C., Marsh, J.H., Taylor, L.L., Bass, S.J., and Guy, D.R.P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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