Beauvais, J., Marsh, J.H. , Kean, A.H., Bryce, A.C. and Button, C. (1992) Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps. Electronics Letters, 28(17), pp. 1670-1672. (doi: 10.1049/el:19921062)
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Abstract
Quantum well intermixing using dielectric caps has been studied using photoluminescence at 77 K. The structures which have been investigated, including shallow depth single quantum wells and multiquantum well waveguiding material, are highly sensitive to the presence of surface defects during annealing. Samples capped with either silicon nitride or silica have shown considerable energy shifts after processing in a rapid thermal annealer, and large energy shifts have also been found in uncapped material. Samples capped with strontium fluoride have shown negligible intermixing of the quantum wells.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
Authors: | Beauvais, J., Marsh, J.H., Kean, A.H., Bryce, A.C., and Button, C. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Electronics Letters |
Publisher: | Institution of Engineering & Technology |
ISSN: | 0013-5194 |
ISSN (Online): | 1350-911X |
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