Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps

Beauvais, J., Marsh, J.H. , Kean, A.H., Bryce, A.C. and Button, C. (1992) Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps. Electronics Letters, 28(17), pp. 1670-1672. (doi:10.1049/el:19921062)

Full text not currently available from Enlighten.

Abstract

Quantum well intermixing using dielectric caps has been studied using photoluminescence at 77 K. The structures which have been investigated, including shallow depth single quantum wells and multiquantum well waveguiding material, are highly sensitive to the presence of surface defects during annealing. Samples capped with either silicon nitride or silica have shown considerable energy shifts after processing in a rapid thermal annealer, and large energy shifts have also been found in uncapped material. Samples capped with strontium fluoride have shown negligible intermixing of the quantum wells.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Beauvais, J., Marsh, J.H., Kean, A.H., Bryce, A.C., and Button, C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

University Staff: Request a correction | Enlighten Editors: Update this record