Ayling, S.G., Beauvais, J. and Marsh, J.H. (1992) Spatial control of quantum well intermixing in GaAs/AGlaAs using a one-step process. Electronics Letters, 28(24), p. 2240. (doi: 10.1049/el:19921440)
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Abstract
Dielectric cap disordering with strontium fluoride masking is used to provide a range of bandgap values in GaAs/AlGaAs quantum wells using a single annealing step. Partial area coverage by a strontium fluoride mask under a silica cap determines the amount of quantum well intermixing.
| Item Type: | Articles |
|---|---|
| Additional Information: | This research was supported by the Science and Engineering Research Council (Grant No. GR/F 65248) and J. Beauvais would like to acknowledge support from the Natural Sciences and Engineering Research Council of Canada. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Ayling, S.G., Beauvais, J., and Marsh, J.H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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