Spatial control of quantum well intermixing in GaAs/AGlaAs using a one-step process

Ayling, S.G., Beauvais, J. and Marsh, J.H. (1992) Spatial control of quantum well intermixing in GaAs/AGlaAs using a one-step process. Electronics Letters, 28(24), p. 2240. (doi:10.1049/el:19921440)

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Abstract

Dielectric cap disordering with strontium fluoride masking is used to provide a range of bandgap values in GaAs/AlGaAs quantum wells using a single annealing step. Partial area coverage by a strontium fluoride mask under a silica cap determines the amount of quantum well intermixing.

Item Type:Articles
Additional Information:This research was supported by the Science and Engineering Research Council (Grant No. GR/F 65248) and J. Beauvais would like to acknowledge support from the Natural Sciences and Engineering Research Council of Canada.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Ayling, S.G., Beauvais, J., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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