McLean, C.J., McKee, A., Marsh, J.H. and De La Rue, R.M. (1993) Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering. Electronics Letters, 29(18), pp. 1657-1658. (doi: 10.1049/el:19931103)
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Abstract
The retention of high electrical and optical quality in GaInAs/GaInAsP multiquantum well laser material which has been bandgap widened by photoabsorption induced disordering (PAID) has been investigated using photoconducting measurements. On applying a reverse bias, Franz-Keldysh broadening of the exciton features is observed demonstrating that bandgap shifted modulators can be fabricated. Selective area disordering across the wafer using an Au reflection mask is also demonstrated.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was supported by the Science and Engineering Research Council (UK) under grant GR/G/13488. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John and De La Rue, Professor Richard |
| Authors: | McLean, C.J., McKee, A., Marsh, J.H., and De La Rue, R.M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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