Ayling, S.G., Bryce, A.C., Gontijo, I., Marsh, J.H. and Roberts, J.S. (1994) A comparison of carbon and zinc doping in GaAs/AlGaAs lasers bandgap-tuned by impurity-free vacancy disordering. Semiconductor Science and Technology, 9(11), pp. 2149-2151. (doi: 10.1088/0268-1242/9/11/020)
Full text not currently available from Enlighten.
Abstract
Bandgap tuning by impurity-free vacancy disordering was investigated on carbon and zinc p-doped laser structures. Zinc diffused during annealing and consequently only carbon-doped material lased. After annealing, threshold current densities rose from 225 to 255 A cm-2 due to an increase in the transparency current; the gain constant of the quantum wells remained constant.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was supported by the Science and Engineering Research Council of the UK, under Grant Numbers GR/H/82471 and GR/F/65248. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Ayling, S.G., Bryce, A.C., Gontijo, I., Marsh, J.H., and Roberts, J.S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Semiconductor Science and Technology |
| Publisher: | IOP Publishing |
| ISSN: | 0268-1242 |
| ISSN (Online): | 1361-6641 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric