Roberts, J.S., Hamilton, C.J., McIlvaney, K. and Marsh, J.H. (1996) Visible laser diodes grown by metal organic vapour phase epitaxy (MOVPE). Electronics Letters, 32(16), pp. 1491-1493. (doi: 10.1049/el:19960982)
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Abstract
Visible (682 nm) InAlGaAs oxide stripe lasers have been fabricated on atmospheric pressure MOVPE grown material. Lowering the oxygen residue of the metal organic reagents allows uniform deposition of high optical quality InAlGaAs QWs at /spl sim/600/spl deg/C. A separate confinement heterostructure laser using a single QW lased at room temperature with J/sub /spl infin// of 1.23 kAcm/sup 2/.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Roberts, J.S., Hamilton, C.J., McIlvaney, K., and Marsh, J.H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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