Localized Kerr‐type nonlinearities in GaAs/AlGaAs multiple quantum well structures at 1.55 μm

Hamilton, C.J., Marsh, J.H. , Hutchings, D.C. , Aitchison, J.S., Kennedy, G.T. and Sibbett, W. (1996) Localized Kerr‐type nonlinearities in GaAs/AlGaAs multiple quantum well structures at 1.55 μm. Applied Physics Letters, 68(22), pp. 3078-3080. (doi:10.1063/1.116428)

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Abstract

We report the use of a novel impurity free vacancy disordering technique which has been used to produce waveguides with different Kerr‐type nonlinear coefficients. The technique relies on standard SiO2 dielectric caps to promote disordering and Ga2O3 caps to suppress disordering. Band‐gap shifts of around 40 nm and consequent changes in n2 of more than 60% are reported.

Item Type:Articles
Additional Information:This work was supported by the EPSRC.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hutchings, Professor David and Marsh, Professor John
Authors: Hamilton, C.J., Marsh, J.H., Hutchings, D.C., Aitchison, J.S., Kennedy, G.T., and Sibbett, W.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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