The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures

Saher Helmy, A., Aitchison, J.S. and Marsh, J.H. (1997) The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures. Applied Physics Letters, 71(20), pp. 2998-3000. (doi: 10.1063/1.120242)

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An atomic-scale model for the kinetics of intermixing of GaAs/AlGaAs, quantum confined heterostructures is presented. It quantifies the effects of the statistical nature of defect diffusion through heterostructures on the Ga/Al interdiffusion across such an interface. The model has been validated by successfully predicting the observed amounts of quantum well intermixing induced by a hydrogen plasma induced defect layer intermixing process. Agreement within 30% of the measurements was obtained for values of the surface release velocity>1 μm s1.

Item Type:Articles
Additional Information:This work has been supported by the Engineering and Physical Sciences Research Council and the Ministry of Defence under Grant No. GR/K45968.
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Saher Helmy, A., Aitchison, J.S., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118

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