Saher Helmy, A., Aitchison, J.S. and Marsh, J.H. (1997) The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures. Applied Physics Letters, 71(20), pp. 2998-3000. (doi: 10.1063/1.120242)
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Abstract
An atomic-scale model for the kinetics of intermixing of GaAs/AlGaAs, quantum confined heterostructures is presented. It quantifies the effects of the statistical nature of defect diffusion through heterostructures on the Ga/Al interdiffusion across such an interface. The model has been validated by successfully predicting the observed amounts of quantum well intermixing induced by a hydrogen plasma induced defect layer intermixing process. Agreement within 30% of the measurements was obtained for values of the surface release velocity>1 μm s1.
Item Type: | Articles |
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Additional Information: | This work has been supported by the Engineering and Physical Sciences Research Council and the Ministry of Defence under Grant No. GR/K45968. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
Authors: | Saher Helmy, A., Aitchison, J.S., and Marsh, J.H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | AIP Publishing |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
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