Khademhosseini, V., Dideban, D., Ahmadi, M. T., Ismail, R. and Heidari, H. (2019) Investigating the electrical characteristics of a single electron transistor utilizing graphene nanoribbon as the island. Journal of Materials Science: Materials in Electronics, 30(8), pp. 8007-8013. (doi: 10.1007/s10854-019-01121-6)
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Abstract
Single electron transistor (SET) is a fast device with promising features in nanotechnology. Its operation speed depends on the island material, so a carbon based material such as graphene nanoribbon (GNR) can be a suitable candidate for using in SET island. The GNR band gap which depends on its width, has a direct impact on the coulomb blockade and SET current. In this research, current–voltage characteristic for the SET utilizing GNR in its island is modelled. The comparison study shows the impact of GNR width and length on the SET current. Furthermore SET quantum capacitance is modeled and effect of GNR width and temperature on the quantum capacitance are investigated.
Item Type: | Articles |
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Additional Information: | This research was supported by University of Kashan under supervision of Dr. Daryoosh Dideban. Authors are thankful to the support received for this work from Micoelectronics Lab (meLab) at the University of Glasgow, UK. Also thanks to the Research Management Center (RMC) of Universiti Teknologi Malaysia (UTM) for providing an excellent research environment in which to simulate this research by Atomistix ToolKit and to complete this work. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Heidari, Professor Hadi |
Authors: | Khademhosseini, V., Dideban, D., Ahmadi, M. T., Ismail, R., and Heidari, H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Journal of Materials Science: Materials in Electronics |
Publisher: | Springer |
ISSN: | 0957-4522 |
ISSN (Online): | 1573-482X |
Published Online: | 19 March 2019 |
Copyright Holders: | Copyright © 2019 Springer Science+Business Media, LLC, part of Springer Nature |
First Published: | First published in Journal of Materials Science: Materials in Electronics 30(8): 8007-8013 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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