Silica capping for Al0.3Ga0.7As/GaAs and In0.2Ga0.8As/GaAs quantum well intermixing

Li, G., Chua, S.J., Xu, S.J., Wang, X.C., Saher Helmy, A., Ke, M.-L. and Marsh, J.H. (1998) Silica capping for Al0.3Ga0.7As/GaAs and In0.2Ga0.8As/GaAs quantum well intermixing. Applied Physics Letters, 73(23), pp. 3393-3395. (doi: 10.1063/1.122777)

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Abstract

Spin-on silica capping has been demonstrated to be an effective dielectric encapsulant layer for quantum well (QW) intermixing at temperatures significantly lower than for conventionally deposited silica. A blueshift of up to 125 meV was observed in the photoluminescence (PL) peak energy of both GaAs and InGaAs QWs after annealing for less than 60 s at 850 °C, without noticeable degradation in the PL emission intensity. A threshold temperature was identified below which no significant QW disordering took place. The activation energy for Al diffusion in Al0.3Ga0.7As/GaAs QWs was about 2.55 eV. Broadly similar effects were seen for In0.2Ga0.8As/GaAs QWs but, in addition, strain effects appear to enhance disordering during the early stages of the anneal.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Li, G., Chua, S.J., Xu, S.J., Wang, X.C., Saher Helmy, A., Ke, M.-L., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:02 December 1998

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