Li, G., Chua, S.J., Xu, S.J., Wang, X.C., Saher Helmy, A., Ke, M.-L. and Marsh, J.H. (1998) Silica capping for Al0.3Ga0.7As/GaAs and In0.2Ga0.8As/GaAs quantum well intermixing. Applied Physics Letters, 73(23), pp. 3393-3395. (doi: 10.1063/1.122777)
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Abstract
Spin-on silica capping has been demonstrated to be an effective dielectric encapsulant layer for quantum well (QW) intermixing at temperatures significantly lower than for conventionally deposited silica. A blueshift of up to 125 meV was observed in the photoluminescence (PL) peak energy of both GaAs and InGaAs QWs after annealing for less than 60 s at 850 °C, without noticeable degradation in the PL emission intensity. A threshold temperature was identified below which no significant QW disordering took place. The activation energy for Al diffusion in Al0.3Ga0.7As/GaAs QWs was about 2.55 eV. Broadly similar effects were seen for In0.2Ga0.8As/GaAs QWs but, in addition, strain effects appear to enhance disordering during the early stages of the anneal.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
Authors: | Li, G., Chua, S.J., Xu, S.J., Wang, X.C., Saher Helmy, A., Ke, M.-L., and Marsh, J.H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | AIP Publishing |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
Published Online: | 02 December 1998 |
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