Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing

Qiu, B.C., Bryce, A.C., De La Rue, R.M. and Marsh, J.H. (1998) Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing. IEEE Photonics Technology Letters, 10(6), pp. 769-771. (doi: 10.1109/68.681478)

Abstract

We report the use of a laser irradiation process, which combines irradiation by continuous wave and Q-switched pulsed Nd:YAG lasers, to promote quantum-well intermixing. Differential shifts up to 70 meV have been obtained in GaInAsP structures. Extended cavity-ridge lasers with 800-μm-long active sections and 1000-μm-long passive sections, were fabricated. The slope efficiency of the extended cavity lasers is very close to that of 800-μm-long all-active lasers, and the threshold current is 10 mA higher than for an 800-μm-long all-active device. The loss in the intermixed single-mode waveguide is 2.1 cm/sup -1/.

• Item Type: Articles
• Additional Information: This work was supported by the Physical and Engineering Sciences Research Council and the U.K. Ministry of Defence. The work of B.C. Qiu was supported by a studentship under the Sino–British Friendship Scholarship Scheme (SBFSS).
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John and De La Rue, Professor Richard
• Authors: Qiu, B.C., Bryce, A.C., De La Rue, R.M., and Marsh, J.H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Photonics Technology Letters
• Publisher: IEEE
• ISSN: 1041-1135
• ISSN (Online): 1941-0174