High-power antiguided laser array fabricated without the need for overgrowth

Gray, J.M., Marsh, J.H. and Roberts, J.S. (1998) High-power antiguided laser array fabricated without the need for overgrowth. IEEE Photonics Technology Letters, 10(3), pp. 328-330. (doi: 10.1109/68.661399)

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The fabrication of conventional semiconductor antiguided laser array structures involves etching of the array profile followed by an overgrowth step. We report the fabrication of an antiguided laser array using zinc diffusion induced intermixing of a superlattice to create the necessary index step. The technique was used to fabricate a five-element, 10-μm center, antiguided laser array operating at 0.860 μm. The device operated at 1.2× diffraction limit to 3-W pulsed (total, both facets) and 1.6-W quasi-continuous-wave (CW) (100-μs pulses; total, both facets).

Item Type:Articles
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Gray, J.M., Marsh, J.H., and Roberts, J.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
ISSN (Online):1941-0174

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