Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures

Saher Helmy, A., Bryce, A.C., Ironside, C.N., Aitchsion, J.S. and Marsh, J.H. (1999) Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures. Applied Physics Letters, 74, pp. 3978-3980. (doi: 10.1063/1.124242)

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Abstract

Compositional intermixing induced by the process of impurity-free vacancy (dielectric cap annealing induced) disordering in GaAs/AlGaAs is studied using Raman spectroscopy. The degree of intermixing in multiple-quantum-well structures was detected through the energy shift of certain Raman modes of the lattices. In addition, localized intermixing, with band-gap shifts as low as 6 nm realized in 1:1 band-gap grating patterns with different periods (⩾4 μm), was also detected through the energy shift and the full width at half maximum of the structures’s Raman modes.

Item Type:Articles
Additional Information:This work has been supported by the Engineering and Physical Sciences Research Council under Grant No. GR/L 75467. A.S.H. would also like to thank the Faculty of Engineering in the University of Glasgow and the ORS award scheme in the U.K. for financial support.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Saher Helmy, A., Bryce, A.C., Ironside, C.N., Aitchsion, J.S., and Marsh, J.H.
College/School:College of Social Sciences > School of Social and Political Sciences
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:21 June 1999

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