Saher Helmy, A., Bryce, A.C., Ironside, C.N., Aitchsion, J.S. and Marsh, J.H. (1999) Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures. Applied Physics Letters, 74, pp. 3978-3980. (doi: 10.1063/1.124242)
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Abstract
Compositional intermixing induced by the process of impurity-free vacancy (dielectric cap annealing induced) disordering in GaAs/AlGaAs is studied using Raman spectroscopy. The degree of intermixing in multiple-quantum-well structures was detected through the energy shift of certain Raman modes of the lattices. In addition, localized intermixing, with band-gap shifts as low as 6 nm realized in 1:1 band-gap grating patterns with different periods (⩾4 μm), was also detected through the energy shift and the full width at half maximum of the structures’s Raman modes.
Item Type: | Articles |
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Additional Information: | This work has been supported by the Engineering and Physical Sciences Research Council under Grant No. GR/L 75467. A.S.H. would also like to thank the Faculty of Engineering in the University of Glasgow and the ORS award scheme in the U.K. for financial support. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
Authors: | Saher Helmy, A., Bryce, A.C., Ironside, C.N., Aitchsion, J.S., and Marsh, J.H. |
College/School: | College of Social Sciences > School of Social and Political Sciences |
Journal Name: | Applied Physics Letters |
Publisher: | AIP Publishing |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
Published Online: | 21 June 1999 |
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