Saher Helmy, A., Murad, S.K., Bryce, A.C., Aitchison, J.S., Marsh, J.H. , Hicks, S.E. and Wilkinson, C.D.W. (1999) Control of silica cap properties by oxygen plasma treatment for single-cap selective impurity free vacancy disordering. Applied Physics Letters, 74(5), pp. 732-734. (doi: 10.1063/1.123106)
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Abstract
By exposing the SiO2 films used as annealing caps in the process of impurity free vacancy disordering (IFVD) to an oxygen plasma, which is produced in a reactive ion etching machine, the effect of the exposed caps on quantum well intermixing can be substantially controlled. The effect of the oxygen treatment is manifested in inhibiting the Ga outdiffusion from GaAs/AlGaAs heterostructures. A selective IFVD process using identical silica caps has been obtained by selective exposure of the caps to oxygen plasma. Differential band gap shifts in excess of 100 meV were achieved with control samples exhibiting band gap shifts less than 10 meV.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work has been supported by the Engineering and Physical Sciences Research Council under Grant No. GR/L 75467. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John and Wilkinson, Professor Christopher |
| Authors: | Saher Helmy, A., Murad, S.K., Bryce, A.C., Aitchison, J.S., Marsh, J.H., Hicks, S.E., and Wilkinson, C.D.W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | AIP Publishing |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Published Online: | 29 January 1999 |
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