Demonstration of passive Q-switching in multiquantum well InGaAs/AlGaInAs diode laser

Loyo-Maldonado, V., McDougall, S.D., Marsh, J.H. , Aitchison, J.S. and Button, C.C. (2000) Demonstration of passive Q-switching in multiquantum well InGaAs/AlGaInAs diode laser. Electronics Letters, 36(11), pp. 952-953. (doi: 10.1049/el:20000687)

Full text not currently available from Enlighten.

Abstract

The first passive Q-switched operation is reported of an InGaAs-AlGaInAs diode laser with a frequency repetition ranging from 1 to 2.5 GHz at the emitting wavelength of 1.58 /spl mu/m. This material is important as a thermally stable alternative to InGaAsP based laser systems operating around 1.5 /spl mu/m.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Loyo-Maldonado, V., McDougall, S.D., Marsh, J.H., Aitchison, J.S., and Button, C.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering and Technology
ISSN:0013-5194
ISSN (Online):1350-911X

University Staff: Request a correction | Enlighten Editors: Update this record