Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers

Liu, X.F., Qiu, B.C., Ke, M.L., Bryce, A.C. and Marsh, J.H. (2000) Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers. IEEE Photonics Technology Letters, 12(9), pp. 1141-1143. (doi: 10.1109/68.874215)

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Abstract

A useful development of the sputtered SiO/sub 2/ intermixing technique is reported, which uses a single stage of sputtered SiO/sub 2/ deposition and annealing to achieve precise tuning of the bandgap energy in the InGaAs-AlInGaAs material system. The blue shift of photoluminescence spectra can be varied in the range of 0-160 nm. Bandgap-tuned lasers were integrated on a single chip using this technique to assess the post-processed material characteristics and demonstrate its application in optoelectronic integration.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Liu, X.F., Qiu, B.C., Ke, M.L., Bryce, A.C., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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