Liu, X.F., Qiu, B.C., Ke, M.L., Bryce, A.C. and Marsh, J.H. (2000) Control of multiple bandgap shifts in InGaAs-AlInGaAs multiple-quantum-well material using different thicknesses of PECVD SiO2 protection layers. IEEE Photonics Technology Letters, 12(9), pp. 1141-1143. (doi: 10.1109/68.874215)
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Abstract
A useful development of the sputtered SiO/sub 2/ intermixing technique is reported, which uses a single stage of sputtered SiO/sub 2/ deposition and annealing to achieve precise tuning of the bandgap energy in the InGaAs-AlInGaAs material system. The blue shift of photoluminescence spectra can be varied in the range of 0-160 nm. Bandgap-tuned lasers were integrated on a single chip using this technique to assess the post-processed material characteristics and demonstrate its application in optoelectronic integration.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
Authors: | Liu, X.F., Qiu, B.C., Ke, M.L., Bryce, A.C., and Marsh, J.H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Photonics Technology Letters |
Publisher: | IEEE |
ISSN: | 1041-1135 |
ISSN (Online): | 1941-0174 |
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