Wang, H., Li, Y., Yu, H., Zhou, X., Chen, W., Pan, J. and Ding, Y. (2018) Quantum Well Laser Diodes With Slightly-Doped Tunnel Junction. In: 2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN), Kolkata, India, 02-04 Feb 2018, ISBN 9781538647998 (doi: 10.1109/WOCN.2018.8556128)
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Abstract
We experimentally investigate the electrical and optical characteristics of conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction N++GaAs/undoped-GaAs. The results show that the slightly-doped tunnel junction give significant role on the laser diodes performances in the InGaAs/GaAs quantum well material system. The TJ LD has a internal quantum efficiency of 21% and the loss is 6.9 em -1 , the current threshold is 35 mA, both the lasers are operating at 1.06 μm, but the slightly-doped tunnel junction diode show nonlinear S-shaped current-voltage and broadband lasing characteristics. The results may also lead to the realization of more applications.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Ding, Dr Ying |
Authors: | Wang, H., Li, Y., Yu, H., Zhou, X., Chen, W., Pan, J., and Ding, Y. |
College/School: | College of Science and Engineering > School of Engineering |
ISSN: | 2151-7703 |
ISBN: | 9781538647998 |
Published Online: | 03 December 2018 |
Copyright Holders: | Copyright © 2018 IEEE |
First Published: | First published in Proceedings of the 2018 Fifteenth International Conference on Wireless and Optical Communications Networks (WOCN) |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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