High-Efficiency Ge-on-Si SPADs for Short-Wave Infrared

Dumas, D. C.S., Kirdoda, J. , Millar, R. W. , Vines, P., Kuzmenko, K., Buller, G. S. and Paul, D. J. (2019) High-Efficiency Ge-on-Si SPADs for Short-Wave Infrared. In: SPIE Photonics West, San Francisco, CA, USA, 02-07 Feb 2019, p. 1091424. (doi: 10.1117/12.2521067)

Abstract

High efficiency, Ge-on-Si single-photon avalanche diode (SPAD) detectors operating in the short-wave infrared region (1310 nm - 1550 nm) at near room temperature have the potential to be used for numerous emerging applications, including quantum communications, quantum imaging and eye-safe LIDAR applications. In this work, planar geometry Ge-on-Si SPAD designs demonstrate a significant decrease in the dark count rate compared to previous generations of Ge-on-Si detectors. 100 μm diameter microfabricated SPADs demonstrate record low NEPs of 2.2×10-16 WHz-1/2, and single-photon detection efficiencies of 18% for 1310 nm at 78 K. The devices demonstrate single-photon detection at temperatures up to 175 K.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Millar, Dr Ross and Paul, Professor Douglas and Dumas, Dr Derek and Kirdoda, Mr Jaroslaw
• Authors: Dumas, D. C.S., Kirdoda, J., Millar, R. W., Vines, P., Kuzmenko, K., Buller, G. S., and Paul, D. J.
• Subjects: Q Science > QC Physics; T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 0277-786X
• Copyright Holders: Copyright © 2019 SPIE
• First Published: First published in Proceedings of SPIE 10914: 1091424
• Publisher Policy: Reproduced in accordance with the publisher copyright policy