Distributed Feedback InGaN/GaN Laser Diodes

Slight, T. J. et al. (2018) Distributed Feedback InGaN/GaN Laser Diodes. In: Gallium Nitride Materials and Devices XIII - San Francisco, United States, San Francisco, California, United States, 27 Jan-1 Feb 2018, p. 45. ISBN 9781510615496 (doi: 10.1117/12.2285632)

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We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Item Type:Conference Proceedings
Additional Information:Proceedings of SPIE - The International Society for Optical Engineering : Gallium Nitride Materials and Devices XIII 2018, volume 10532. This work was supported by the Innovate UK project Coolblue (project number 132543), and the European Union Eurostars project, Blucom (project number 10509).
Glasgow Author(s) Enlighten ID:Watson, Dr Scott and Kelly, Professor Anthony
Authors: Slight, T. J., Watson, S., Yadav, A., Grzanka, S., Stanczyk, S., Docherty, K. E., Rafailov, E. U., Perlin, P., Najda, S., Leszczyński, M., and Kelly, A. E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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