InGaN/GaN Laser Diodes and their Applications

Watson, S. et al. (2018) InGaN/GaN Laser Diodes and their Applications. 20th Anniversary International Conference on Transparent Optical Networks (ICTON 2018), Bucharest, Romania, 1-5 July 2017. ISBN 9781538666043 (doi: 10.1109/ICTON.2018.8473864)

171586.pdf - Accepted Version



Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions.

Item Type:Conference or Workshop Item
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Glasgow Author(s) Enlighten ID:Watson, Dr Scott and Gwyn, Mr Steffan and Kelly, Professor Anthony and Giuliano, Mr Giovanni and VIOLA, SHAUN
Authors: Watson, S., Gwyn, S., Viola, S., Giuliano, G., Slight, T. J., Stanczyk, S., Grzanka, S., Yadav, A., Rowe, D., Laycock, L., Docherty, K. E., Rafailov, E., Perlin, P., Najda, S., Leszczynski, M., and Kelly, A. E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2018 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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