Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings

Slight, T. J. et al. (2018) Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings. Applied Physics Express, 11(11), 112701. (doi: 10.7567/APEX.11.112701)

171585.pdf - Accepted Version



We report on the continuous-wave, room-temperature operation of a distributed-feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and characterization of DFB devices, which are based on the (Al,In)GaN material system, is described. The uncoated devices exhibited single-wavelength emission at 408.6 nm with an optical power of 20 mW at 225 mA. A side-mode suppression ratio (SMSR) of 35 dB was achieved, with a resolution-limited full-width at half maximum of 6.5 pm.

Item Type:Articles
Additional Information:This research has been supported by the European Union through grant E10509, Innovate U.K. through grant 132543, and by the National Centre for Research and Development through grants E10509/29/ NCBiR/2017 and 1/POLBER-3/2018).
Glasgow Author(s) Enlighten ID:Kelly, Professor Anthony and Watson, Dr Scott and Gwyn, Mr Steffan
Authors: Slight, T. J., Stanczyk, S., Watson, S., Yadav, A., Grzanka, S., Rafailov, E., Perlin, P., Najda, S. P., Leszczyński, M., Gwyn, S., and Kelly, A. E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Express
Publisher:IOP Publishing
ISSN (Online):1882-0786
Copyright Holders:Copyright © 2018 The Japan Society of Applied Physics
First Published:First published in Applied Physics Express 11(11):112701
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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