The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool

Hemakumara, D., Li, X. , Cho, S., Floros, K., Guiney, I., Moran, D. , Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I.G. (2017) The Impact on GaN MOS Capacitor Performance of In‐situ Processing in a Clustered ALD/ICP/RIE Tool. AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) featuring the 4th International Atomic Layer Etching Workshop (ALE 2017), Denver, CO, USA, 15-18 Jul 2017.

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Abstract

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Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sung-Jin and Thayne, Prof Iain and Moran, Professor David and Floros, Mr Konstantinos and Hemakumara, Miss Dilini
Authors: Hemakumara, D., Li, X., Cho, S., Floros, K., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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