Hemakumara, D., Li, X. , Floros, K., Cho, S., Guiney, I., Moran, D. , Humphreys, C., O'Mahony, A., Knoops, H. and Thayne, I. G. (2017) 4x Reduction in Gan MOSCAP Flatband Voltage Hysteresis with an In-situ Deposited Sin Cap and Device Processing in a Cluster Tool. 12th International Conference on Nitride Semiconductors, Strasbourg, France, 24-28 July 2017.
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Abstract
No abstract available.
Item Type: | Conference or Workshop Item |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Li, Dr Xu and Cho, Dr Sung-Jin and Thayne, Prof Iain and Moran, Professor David and Floros, Mr Konstantinos and Hemakumara, Miss Dilini |
Authors: | Hemakumara, D., Li, X., Floros, K., Cho, S., Guiney, I., Moran, D., Humphreys, C., O'Mahony, A., Knoops, H., and Thayne, I. G. |
College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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