The Impact of In-situ Hydrogen Plasma Passivation Prior to ALD HfO2 Deposition on the Electrical Properties of ICP Etched P-type InGaAs (110) MOSCAPs

Fu, Y.-C., Li, X. , Peralagu, U. , Millar, D., Steer, M., Zhou, H., Droopad, R. and Thayne, I.G. (2017) The Impact of In-situ Hydrogen Plasma Passivation Prior to ALD HfO2 Deposition on the Electrical Properties of ICP Etched P-type InGaAs (110) MOSCAPs. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6-9 Dec 2017.

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Abstract

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Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Prof Iain and Fu, Mr Yen-Chun and Steer, Dr Matthew and Li, Dr Xu and Millar, Mr David and Peralagu, Mr Uthayasankaran
Authors: Fu, Y.-C., Li, X., Peralagu, U., Millar, D., Steer, M., Zhou, H., Droopad, R., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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