In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication

Li, X. , Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D. , Humphreys, C. and Thayne, I.G. (2018) In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication. UKNC Winter Conference 2018, Manchester, UK, 10-11 Jan 2018.

Abstract

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• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Zhou, Dr Haiping and Thayne, Prof Iain and Moran, Professor David and Floros, Mr Konstantinos and Li, Dr Xu and Cho, Dr Sung-Jin and Hemakumara, Miss Dilini
• Authors: Li, X., Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D., Humphreys, C., and Thayne, I.G.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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