A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication

Li, X. , Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D. and Thayne, I. (2018) A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018 / IC-PLANTS2018), Nagoya, Japan, 4-8 March 2018.

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Prof Iain and Moran, Professor David and Floros, Mr Konstantinos and Li, Dr Xu and Cho, Dr Sung-Jin and Hemakumara, Miss Dilini
Authors: Li, X., Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record