Li, X. , Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2018) Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis. AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) and the 5th International Atomic Layer Etching Workshop (ALE 2018), Incheon, South Korea, 29 Jul-1 Aug 2018.
Full text not currently available from Enlighten.
Item Type: | Conference or Workshop Item |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zhou, Dr Haiping and Thayne, Prof Iain and Moran, Professor David and Li, Dr Xu and Cho, Dr Sung-Jin and Hemakumara, Miss Dilini |
Authors: | Li, X., Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D., and Thayne, I. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
University Staff: Request a correction | Enlighten Editors: Update this record