Simulation of GaAs 3-D pixel detectors

Mathieson, K., Bates, R., Meikle, A., O'Shea, V. , Passmore, M.S., Rahman, M. and Smith, K.M. (2001) Simulation of GaAs 3-D pixel detectors. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 466(1), 194 -201. (doi: 10.1016/S0168-9002(01)00845-2)

Abstract

The performance of an architecture for X-ray pixel detectors is discussed. The three-dimensional (3-D) structure has electrodes which penetrate the bulk of the detector medium allowing low- bias, high-speed operation along with improved charge collection efficiency. We use the modelling package MEDICI to simulate epitaxial gallium arsenide 3-D detectors. This includes an analysis of charge transport and signal formation, with details of the expected charge collection efficiencies. These detectors may be fabricated by a number of means including dry etching. The effect of dry-etch damage on detector performance is analysed as this is potentially an important factor.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: O'Shea, Professor Val and Mathieson, Dr Keith and Smith, Professor Kenway and Bates, Dr Richard
• Authors: Mathieson, K., Bates, R., Meikle, A., O'Shea, V., Passmore, M.S., Rahman, M., and Smith, K.M.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
• ISSN: 0168-9002
• ISSN (Online): 1872-9576