Lee, J., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Sadi, T., Georgiev, V. P. , Nedjalkov, M. and Asenov, A. (2019) A Multi-Scale Simulation Study of the Strained Si Nanowire FETs. In: 2018 IEEE 13th Nanotechnology Materials & Devices Conference (NMDC 2018), Portland, OR, USA, 14-17 Oct 2018, ISBN 9781538610169 (doi: 10.1109/NMDC.2018.8605884)
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Abstract
In this work, we study 2.1nm-diameter uniaxial strained Si gate-all-around nanowire field-effect transistors, focusing on the electron mobility and the variability due to random discrete dopants (RDDs). Firstly, we extract the electron effective masses under various strains from Density Functional Theory (DFT) simulations. Secondly, we present the impact of the strain on the electron mobility in the Si nanowire using the Kubo-Greenwood formalism with a set of multi-subband phonon, surface roughness, and ionized impurity scattering mechanisms. Finally, we perform quantum transport simulations to investigate the effect of RDD on the threshold voltage and ON-state current variation.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Carrillo-Nunez, Dr Hamilton and Asenov, Professor Asen and Lee, Mr Jaehyun and Berrada, Dr Salim and Medina Bailon, Miss Cristina and Georgiev, Professor Vihar and Sadi, Dr Toufik |
| Authors: | Lee, J., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Sadi, T., Georgiev, V. P., Nedjalkov, M., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 2378-377X |
| ISBN: | 9781538610169 |
| Published Online: | 10 January 2019 |
| Copyright Holders: | Copyright © 2018 IEEE |
| First Published: | First published in 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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