Pellegrini, G., Baldassarre, L., Giliberti, V., Frigerio, J., Gallacher, K. , Paul, D. J. , Isella, G., Ortolani, M. and Biagioni, P. (2018) Benchmarking the use of heavily-doped Ge for plasmonics and sensing in the mid-infrared. ACS Photonics, 5(9), pp. 3601-3607. (doi: 10.1021/acsphotonics.8b00438)
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Abstract
Despite the recent introduction of heavily-doped semiconductors for mid-infrared plasmonics, it still remains an open issue whether such materials can compete with noble metals. A whole set of figures of merit is employed to thoroughly assess the use of heavily-doped Ge on Si as a mid-infrared plasmonic material and benchmark it against standard noble metals such as Au. A full-wave electrodynamics framework is used to model and design high-performance, silicon foundry compatible mid-infrared plasmonic sensors based on experimental material data reaching plasma wavelengths down to λp ~ 3.1 μm. It is finally shown that Ge sensors can provide signal enhancements for vibrational spectroscopy above the 3 orders of magnitude, thus representing a promising alternative to noble metals, leveraging the full compatibility with the silicon foundry microfabrication processes.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Gallacher, Dr Kevin |
Authors: | Pellegrini, G., Baldassarre, L., Giliberti, V., Frigerio, J., Gallacher, K., Paul, D. J., Isella, G., Ortolani, M., and Biagioni, P. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | ACS Photonics |
Publisher: | American Chemical Society |
ISSN: | 2330-4022 |
ISSN (Online): | 2330-4022 |
Published Online: | 25 July 2018 |
Copyright Holders: | Copyright © 2018 American Chemical Society |
First Published: | First published in ACS Photonics 5(9):3601-3607 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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