Optical response of strained- and unstrained-silicon cold-electron bolometers

Brien, T.L.R. et al. (2016) Optical response of strained- and unstrained-silicon cold-electron bolometers. Journal of Low Temperature Physics, 184(1-2), pp. 231-237. (doi: 10.1007/s10909-016-1569-x)

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We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ( 32×14 μm ) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of 3.0×10−16 and 6.6×10−17 WHz−1/2 for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

Item Type:Articles
Additional Information:This work has been financially supported by the STFC through Grant ST/K000926/1, the EPSRC through Grant Numbers EP/F040784/1 and EP/J001074/1, and the Academy of Finland through Grant 252598.
Glasgow Author(s) Enlighten ID:Morozov, Dr Dmitry
Authors: Brien, T.L.R., Ade, P.A.R., Barry, P.S., Dunscombe, C.J., Leadley, D.R., Morozov, D.V., Myronov, M., Parker, E.H.C., Prest, M.J., Prunnila, M., Sudiwala, R.V., Whall, T.E., and Mauskopf, P.D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Low Temperature Physics
ISSN (Online):1573-7357
Published Online:09 March 2016
Copyright Holders:Copyright © 2016 The Authors
First Published:First published in Journal of Low Temperature Physics 184:231-237
Publisher Policy:Reproduced under a Creative Commons License

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