Piezoelectric graphene field effect transistor pressure sensors for tactile sensing

Yogeswaran, N., Navaraj, W.T., Gupta, S., Liu, F. , Vinciguerra, V., Lorenzelli, L. and Dahiya, R. (2018) Piezoelectric graphene field effect transistor pressure sensors for tactile sensing. Applied Physics Letters, 113(1), 014102. (doi: 10.1063/1.5030545)

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This paper presents graphene field-effect transistor (GFET) based pressure sensors for tactile sensing. The sensing device comprises GFET connected with a piezoelectric metal-insulator-metal (MIM) capacitor in an extended gate configuration. The application of pressure on MIM generates a piezo-potential which modulates the channel current of GFET. The fabricated pressure sensor was tested over a range of 23.54–94.18 kPa, and it exhibits a sensitivity of 4.55 × 10−3 kPa−1. Further, the low voltage (∼100 mV) operation of the presented pressure sensors makes them ideal for wearable electronic applications.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Liu, Mr Fengyuan and Yogeswaran, Mr Nivasan and Dahiya, Professor Ravinder and Gupta, Shoubhik and Navaraj, Mr William
Authors: Yogeswaran, N., Navaraj, W.T., Gupta, S., Liu, F., Vinciguerra, V., Lorenzelli, L., and Dahiya, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118
Copyright Holders:Copyright © 2018 The Authors
First Published:First published in Applied Physics Letters 113(1): 014102
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
682141CONTESTRavinder DahiyaEuropean Commission (EC)317488ENG - ENGINEERING ELECTRONICS & NANO ENG
663861Engineering Fellowships for Growth: Printed Tactile SKINRavinder DahiyaEngineering and Physical Sciences Research Council (EPSRC)EP/M002527/1ENG - ENGINEERING ELECTRONICS & NANO ENG