Germanium on Silicon Single Photon Avalanche Detectors Using Silicon-on-Insulator Substrates

Ghisetti, E. A., Dumas, D., Kirdoda, J. , Gallacher, K. , Millar, R. W. , Mirza, M. M.A. and Paul, D. J. (2018) Germanium on Silicon Single Photon Avalanche Detectors Using Silicon-on-Insulator Substrates. Integrated Optics: Devices, Materials, and Technologies XXII, San Francisco, CA, USA, 29 Jan - 01 Feb 2018. (doi: 10.1117/12.2290403)

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Single photon avalanche detectors (SPADs) operating in gated-Geiger mode at near infrared wavelengths have applications in quantum key distribution (QKD), eye-safe light detection and ranging (LIDAR), 3D image sensing, quantum enhanced imaging and photonic based quantum information processing. Whilst InGaAs SPADs are commercially available, the high cost and lack of integrated SPADs limit the applications. We have previously demonstrated vertical Geiger mode Ge on Si SPADs at 1310 and 1550 nm operating at 100 K where the Ge is used as an absorber and the lower noise Si is used as the avalanche gain region. At 100 K and 1310 nm a single photon detection efficiency of 4% was demonstrated with a dark count rate (DCR) of 5 MHz.

Item Type:Conference or Workshop Item
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Paul, Professor Douglas and Millar, Dr Ross and Ghisetti, Mr Emanuele and Dumas, Dr Derek and Gallacher, Dr Kevin and Kirdoda, Mr Jaroslaw
Authors: Ghisetti, E. A., Dumas, D., Kirdoda, J., Gallacher, K., Millar, R. W., Mirza, M. M.A., and Paul, D. J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Published Online:14 March 2018
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