Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods

Benvenuti, E. et al. (2018) Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods. Journal of Materials Chemistry C, 6(21), pp. 5601-5608. (doi: 10.1039/C8TC00544C)

Abstract

We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.

• Item Type: Articles
• Additional Information: This work received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement no. 644742 (LEO Project) and from the national project ‘‘Premiale’’ EOS funded by Italian Ministero dell’Istruzione dell’Universita` e della Ricerca (MIUR). D. G. was supported by the Italian flagship NANOMAX, N-CHEM.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Lopez, Dr Sergio
• Authors: Benvenuti, E., Gentili, D., Chiarella, F., Portone, A., Barra, M., Cecchini, M., Cappuccino, C., Zambianchi, M., Lopez, S. G., Salzillo, T., Venuti, E., Cassinese, A., Pisignano, D., Persano, L., Cavallini, M., Maini, L., Melucci, M., Muccini, M., and Toffanin, S.
• College/School: College of Science and Engineering > School of Chemistry
• Journal Name: Journal of Materials Chemistry C
• Publisher: Royal Society of Chemistry
• ISSN: 2050-7526
• ISSN (Online): 2050-7534
• Published Online: 29 March 2018